Web25 de jul. de 2024 · Tunable and highly conductive hole transport materials are crucial for the performance of organic electronics applications such as organic light emitting diodes … Web23 de out. de 2012 · In this paper, we report a Hall mobility of one million in a germanium two-dimensional hole gas. The extremely high hole mobility of 1.1 × 10 6 cm 2 V −1 s −1 at a carrier sheet density of 3 × 10 11 cm −2 was observed at 12 K. This mobility is nearly an order of magnitude higher than any previously reported. From the structural analysis …
High hole mobility and non-localized states in amorphous …
Web25 de jun. de 2024 · The monolayer GeC possesses a direct bandgap of 2.07 eV with high hole mobility up to 6600 cm 2 V –1 s –1. Coupling with ballistic quantum transport simulations, the results show that both n- and p-FETs can hold the on-currents exceeding 1200 µA µm –1 for HP devices. Web4 de jan. de 2024 · A dopant-free hole transport layer with high mobility and a low-temperature process is desired for optoelectronic devices. Here, we study a … bishops window tinting
High Hole Mobility in Long‐Range Ordered 2D Lead …
Web5 de nov. de 2024 · Exceptional hole mobilities are measured for polycrystalline GaSb on SiO 2 in the range of 9–66 cm 2 /Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm 2 /Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. WebOur transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS 2. At room temperature, our few-layer … Web14 de fev. de 2024 · Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and … bishops windows